PMBFJ308T/R N-Channel JFET
From Philips Semiconductors / NXP Semiconductors
@I(D) (A) (Test Condition) | 10.0m |
@V(DS) (V) (Test Condition) | 10.0 |
@V(GS) (V) (Test Condition) | 15.0 |
Absolute Max. Power Diss. (W) | 250m |
C(iss) Max. (F) | 5.0p |
I(DSS) Max. (A) | 60m |
I(DSS) Min. (A) | 12m |
I(G) Max. (A) | 50.0m |
I(GSS) Max. (A) | 1.0n |
Military | N |
Package | TO-236 |
V(BR)DSS (V) | 25.0 |
V(BR)GSS (V) | 25.0 |
V(GS)off Max. (V) | 6.5 |
V(GS)off Min. (V) | 1.0 |
g(fs) Min. (S) Trans. conduct. | 13m |
r(DS)on Max. (Ohms) | 50 |