Datasheet.Directory

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"30, FM-2","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"KU BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package Shape...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"2.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, S011, 4 PIN","Terminal Form":"FLAT","Package Style":"FLANGE MOUNT","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"20 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"L BAND","Number of Elements":"1","Case Connection":"EMITTER","Transistor Element Material":"SILICON","Terminal Po...

{"Status":"Discontinued","@I(C) (A) (Test Condition)":"500m","I(CBO) Max. (A)":"2.5m","Absolute Max. Power Diss. (W)":"1.0","I(C) Abs.(A) Collector Current":"4.0","h(FE) Max. Current gain.":"120","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"1.0G","V(BR)CEO (V)":"55","Package":"RFMOD","h(FE) Min. Static Current Gain":"15","V(BR)CBO (V)":"55","Military":"N"}...

{"Status":"Discontinued","@I(C) (A) (Test Condition)":"50m","I(CBO) Max. (A)":"500u","Absolute Max. Power Diss. (W)":"1.0","I(C) Abs.(A) Collector Current":"250m","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"1.5G","V(BR)CEO (V)":"40","Package":"StX-8","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"40","Military":"N"}...

{"@I(C) (A) (Test Condition)":"50m","Absolute Max. Power Diss. (W)":"1.5","@Freq. (Hz) (Test Condition)":"2.0G","Semiconductor Material":"Silicon","@V(CE) (V) (Test Condition)":"12","Noise Figure Max. (dB)":"14","Package":"StX-8","V(BR)CBO (V)":"40","Military":"N"}...

{"@I(C) (A) (Test Condition)":"50m","Absolute Max. Power Diss. (W)":"900m","@Freq. (Hz) (Test Condition)":"3.0G","Semiconductor Material":"Silicon","@V(CE) (V) (Test Condition)":"12","Noise Figure Max. (dB)":"11","Package":"StX-8","V(BR)CBO (V)":"50","Military":"N"}...

{"Absolute Max. Power Diss. (W)":"10","Semiconductor Material":"Silicon","Package":"StX-8","@Freq. (Hz) (Test Condition)":"1.0G","V(BR)CBO (V)":"55","Military":"N"}...

{"Absolute Max. Power Diss. (W)":"18","Semiconductor Material":"Silicon","Package":"StX-8","@Freq. (Hz) (Test Condition)":"1.0G","V(BR)CBO (V)":"55","Military":"N"}...

{"Absolute Max. Power Diss. (W)":"28","Semiconductor Material":"Silicon","Package":"StX-8","@Freq. (Hz) (Test Condition)":"1.0G","V(BR)CBO (V)":"60","Military":"N"}...

{"Absolute Max. Power Diss. (W)":"2.0","Semiconductor Material":"Silicon","Package":"StX-8","@Freq. (Hz) (Test Condition)":"1.0G","V(BR)CBO (V)":"50","Military":"N"}...