Product Datasheet Search Results:
- MGF0918A-01
- Mitsubishi Electric & Electronics Usa, Inc.
- S BAND, GaAs, N-CHANNEL, RF POWER, JFET
Product Details Search Results:
Mitsubishichips.com/MGF0918A-01
{"Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"3 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"10 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"HE...
1457 Bytes - 20:35:18, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
AKH08A-01S.pdf | 1.07 | 1 | Request |