Product Datasheet Search Results:
- M12L64164A-6TIG
- Elite Semiconductor Memory Technology, Inc.
- 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
- M12L64164A-6TIG2M
- Elite Semiconductor Memory Technology, Inc.
- SYNCHRONOUS DRAM
- M12L64164A-6TIG2Y
- Elite Semiconductor Memory Technology, Inc.
- SYNCHRONOUS DRAM
Product Details Search Results:
Esmt.com.tw/M12L64164A-6TIG
{"Terminal Pitch":"0.8000 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Number of Words Code":"4M","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"4.19E6 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"6.71E7 deg","Supply Voltage-Max (Vsup)":"3.6 V","Number of Ports":"1","Supply Vo...
1629 Bytes - 04:01:15, 28 November 2024
Esmt.com.tw/M12L64164A-6TIG2M
{"Status":"ACTIVE","Memory IC Type":"SYNCHRONOUS DRAM"}...
802 Bytes - 04:01:15, 28 November 2024
Esmt.com.tw/M12L64164A-6TIG2Y
{"Status":"ACTIVE","Memory IC Type":"SYNCHRONOUS DRAM"}...
803 Bytes - 04:01:15, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
DARC-C4-M12L-M.pdf | 0.12 | 1 | Request | |
E2B-M12LS02-WP-C1_5M.pdf | 6.42 | 1 | Request | |
E2A-M12LS04-WP-C2_2M.pdf | 0.30 | 1 | Request | |
E2A-M12LN08-M1-C2.pdf | 0.30 | 1 | Request | |
E2B-M12LS04-WP-C2_2M.pdf | 6.42 | 1 | Request | |
E2B-M12LN05-WP-C1_5M.pdf | 6.42 | 1 | Request | |
E2B-M12LS04-WP-B2_5M.pdf | 6.42 | 1 | Request | |
E2B-M12LN08-WP-B2_2M.pdf | 6.42 | 1 | Request | |
E2B-M12LS04-WP-B2_2M.pdf | 6.42 | 1 | Request | |
E2A-M12LS04-WP-C2_5M.pdf | 0.30 | 1 | Request | |
E2A-M12LN08-WP-B1_2M.pdf | 0.30 | 1 | Request | |
E2B-M12LN05-WP-C2_2M.pdf | 6.42 | 1 | Request |