Product Datasheet Search Results:
1 Pages, 31 KB, Original- 2SK3530
- Fuji Electric Co., Ltd.
- Fuji Power MOSFET SuperFAP-G series Target Specification
4 Pages, 116 KB, Original- 2SK3530-01MR
- Fuji Electric
- 2SK3530-01MR
4 Pages, 113 KB, Original- 2SK3531-01
- Fuji Electric
- 2SK3531-01
4 Pages, 111 KB, Original- 2SK3532
- Fuji Electric Co., Ltd.
- N Channel Silicon Power MOSFET
4 Pages, 114 KB, Original- 2SK3532-01MR
- Fuji Electric
- 2SK3532-01MR
4 Pages, 119 KB, Original- 2SK3533-01
- Fuji Electric
- 2SK3533-01
4 Pages, 120 KB, Original- 2SK3534-01MR
- Fuji Electric
- 2SK3534-01MR
20 Pages, 316 KB, Original- 2SK3534-01R
- Fuji Electric Co., Ltd.
- Power MOSFET, 900V 5.5A, MOS-FET N-Channel enhanced
4 Pages, 115 KB, Original- 2SK3535-01
- Fuji Electric
- 2SK3535-01
4 Pages, 115 KB, Original- 2SK3537-01MR
- Fuji Electric
- 2SK3537-01MR
32 Pages, 1149 KB, Original- K353
- Omron Industrial Automation
- 5 Pt. Event Input Brd/PNP Term
Product Details Search Results:
Fujielectric.co.jp/2SK3530-01MR
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"235 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.9 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTO...
1549 Bytes - 19:06:40, 25 November 2024
Fujielectric.co.jp/2SK3531-01
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"244 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTO...
1509 Bytes - 19:06:40, 25 November 2024
Fujielectric.co.jp/2SK3532-01MR
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"244 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTO...
1551 Bytes - 19:06:40, 25 November 2024
Fujielectric.co.jp/2SK3533-01
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1506 Bytes - 19:06:40, 25 November 2024
Fujielectric.co.jp/2SK3534-01MR
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1545 Bytes - 19:06:40, 25 November 2024
Fujielectric.co.jp/2SK3535-01
{"Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"252 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"148 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","Transist...
1496 Bytes - 19:06:40, 25 November 2024
Fujielectric.co.jp/2SK3537-01MR
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.1 W","Avalanche Energy Rating (Eas)":"242 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"23 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"92 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1556 Bytes - 19:06:40, 25 November 2024
Fuji_semiconductor/2SK3533-01
{"Category":"Power MOSFET","Dimensions":"10 x 4.5 x 15 mm","Maximum Continuous Drain Current":"\u00b17 A","Width":"4.5 mm","Maximum Drain Source Voltage":"900 V","Package Type":"TO-220AB","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"25 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"22 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"920 pF @ 25 V","Length":"10 mm",...
2134 Bytes - 19:06:40, 25 November 2024
Ia.omron.com/K353
850 Bytes - 19:06:40, 25 November 2024
Konica_minolta/A0DK353
752 Bytes - 19:06:40, 25 November 2024
Na.industrial.panasonic.com/2SK353900L
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SMINI3-F1","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.5V @ 1\u00b5A","Input Capacitance (Ciss) @ Vds":"12pF @ 3V","Series":"-","Standard Package":"1","Supplier Device Package":"SMini3-G1","Catalog Drawings":"S-Mini Pkg 3-Pin","Datasheets":"2SK3539","Rds On (Max) @ Id, Vgs":"15 Ohm @ 10mA, 2.5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"150mW","Package / Case":"SC-70, SOT...
1691 Bytes - 19:06:40, 25 November 2024
Na.industrial.panasonic.com/2SK3539G0L
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SMINI3-F1","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.5V @ 1\u00b5A","Input Capacitance (Ciss) @ Vds":"12pF @ 3V","Series":"-","Standard Package":"1","Supplier Device Package":"SMini3-F2","Catalog Drawings":"S-Mini Pkg 3-Pin","Datasheets":"2SK3539","Rds On (Max) @ Id, Vgs":"12 Ohm @ 10mA, 4V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"150mW","Package / Case":"SC-85","Mo...
1663 Bytes - 19:06:40, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3535-01.pdf | 0.11 | 1 | Request | |
| 2SK3530-01MR.pdf | 0.11 | 1 | Request | |
| 2SK3534-01MR.pdf | 0.12 | 1 | Request | |
| 2SK3537-01MR.pdf | 0.11 | 1 | Request | |
| 2SK3532-01MR.pdf | 0.11 | 1 | Request | |
| 2SK3533-01.pdf | 0.11 | 1 | Request | |
| 2SK3531-01.pdf | 0.11 | 1 | Request | |
| 7B09K353X764G1.pdf | 0.07 | 1 | Request | |
| 7B09K353Z602G1.pdf | 0.07 | 1 | Request |
