2SK3533-01
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.54 Ohms; ID +/-7A; TO-220AB; PD 225W; VGS +/-

From Fuji Semiconductor

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions10 x 4.5 x 15 mm
Forward Diode Voltage1.5 V
Forward Transconductance8.2 S
Height15 mm
Length10 mm
Maximum Continuous Drain Current±7 A
Maximum Drain Source Resistance2 Ω
Maximum Drain Source Voltage900 V
Maximum Gate Source Voltage±30 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation225 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeTO-220AB
Pin Count3
Typical Gate Charge @ Vgs25 nC @ 10 V
Typical Input Capacitance @ Vds920 pF @ 25 V
Typical Turn On Delay Time22 ns
Typical TurnOff Delay Time45 ns
Width4.5 mm

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