Product Datasheet Search Results:
1 Pages, 36 KB, Scan- JANTXV2N5115
- Defense Logistics Agency
- 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET
2 Pages, 46 KB, Original- JANTXV2N5115
- Microsemi Corporation
- TRANS JFET P-CH 30V 3TO-18
2 Pages, 46 KB, Original- JANTXV2N5115UB
- Microsemi Corporation
- TRANS JFET P-CH 30V 3TO-18
1 Pages, 36 KB, Scan- JANTXV2N5115
- Solitron Devices, Inc.
- P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
4 Pages, 35 KB, Original- JANTXV2N5115
- Vishay Presicion Group
- P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
Product Details Search Results:
Aeroflex.com/JANTXV2N5115
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"100 ohm","Case Connection":"GATE","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Packa...
1354 Bytes - 16:39:21, 29 November 2024
Solitrondevices.com/JANTXV2N5115
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number of Elements":"1"}...
1192 Bytes - 16:39:21, 29 November 2024
Vishay.com/JANTXV2N5115
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"100 ohm","Case Connection":"GATE","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SM...
1367 Bytes - 16:39:21, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 4N5115.pdf | 0.07 | 1 | Request |
