Product Datasheet Search Results:
- JANTX2N7219
- Infineon Technologies Ag
- Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-254AA
- JANTX2N7219
- International Rectifier
- 18 A, 200 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- JANTX2N7219D
- International Rectifier
- 18 A, 200 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- JANTX2N7219U
- International Rectifier
- 18 A, 200 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
- JANTX2N7219
- Microsemi Corp.
- 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- JANTX2N7219
- Omnirel
- Up to 28A N-channel enhancement mode MOSFET power transistor
- JANTX2N7219
- Semicoa
- POWER, FET
Product Details Search Results:
Infineon.com/JANTX2N7219
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"125(W)","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-254AA","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1476 Bytes - 03:15:45, 17 November 2024
Irf.com/JANTX2N7219
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...
1519 Bytes - 03:15:45, 17 November 2024
Irf.com/JANTX2N7219D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...
1464 Bytes - 03:15:45, 17 November 2024
Irf.com/JANTX2N7219U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1552 Bytes - 03:15:45, 17 November 2024
Microsemi.com/JANTX2N7219
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-254, 3 PIN","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1...
1316 Bytes - 03:15:45, 17 November 2024
Semicoa.com/JANTX2N7219
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
701 Bytes - 03:15:45, 17 November 2024
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