Product Datasheet Search Results:
4 Pages, 157 KB, Original- IXFT21N50
- Ixys Corporation
- Discrete MOSFETs: HiPerFET Power MOSFETS
2 Pages, 103 KB, Original- IXFT21N50F
- Ixys Corporation
- 500V HiPerRF power MOSFET
2 Pages, 55 KB, Original- IXFT21N50Q
- Ixys Corporation
- 500V HiPerFET power MOSFET
2 Pages, 106 KB, Original- IXFT21N50F
- Zilog
- 21 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
4 Pages, 561 KB, Original- IXFT21N50Q
- Zilog
- 21 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
Product Details Search Results:
Ixys.com/IXFT21N50Q
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 4mA","Series":"HiPerFET\u2122","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Supplier Device Package":"TO-268","Datasheets":"IXF(H,T)21N50Q","Rds On (Max) @ Id, Vgs":"250 mOhm @ 10.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"280W","Standard Package":"30","Drain to Source Voltage (Vdss)":"500...
1394 Bytes - 21:35:10, 12 January 2026
Zilog.com/IXFT21N50
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1493 Bytes - 21:35:10, 12 January 2026
Zilog.com/IXFT21N50F
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Tec...
1540 Bytes - 21:35:10, 12 January 2026
Zilog.com/IXFT21N50Q
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Tec...
1534 Bytes - 21:35:10, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IXFT21N50F.pdf | 0.06 | 1 | Request | |
| IXFT21N50.pdf | 0.16 | 1 | Request | |
| IXFT21N50F.pdf | 0.10 | 1 | Request | |
| IXFT21N50Q.pdf | 0.55 | 1 | Request |
