Datasheet.Directory

{"V(BR)GES (V)":"20","t(d)off Max. (s) Off time":"600n","V(CE)sat Max.(V)":"3.0","Absolute Max. Power Diss. (W)":"300","V(BR)CES (V)":"1.2k","I(C) Abs.(A) Collector Current":"50","@I(C) (A) (Test Condition)":"25","t(r) Max. (s) Rise time":"130n","t(f) Max. (s) Fall time.":"100n","I(GES) Max. (A)":"500n","V(GE)th Max. (V)":"6.5","I(CES) Max. (A)":"1.1m","Package":"TO-268AA","@V(GE) (Test Condition)":"15","td(on) Max (s) On time delay":"150n"}...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"400 ns","Collector Current-Max (IC)":"50 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"75 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","Transistor Applicati...