Product Datasheet Search Results:
9 Pages, 228 KB, Original- IRLZ34NPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH 55V 30A 3-Pin(3+Tab) TO-220AB Tube
11 Pages, 296 KB, Original- IRLZ34NSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK Tube
11 Pages, 152 KB, Original- IRLZ34NSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R
6 Pages, 174 KB, Scan- IRLZ34
- International Rectifier
- HEXFET Power MOSFET
8 Pages, 107 KB, Original- IRLZ34L
- International Rectifier
- HEXFET Power MOSFET
8 Pages, 135 KB, Original- IRLZ34N
- International Rectifier
- HEXFET Power MOSFET
1 Pages, 32 KB, Scan- IRLZ34N-003
- International Rectifier
- 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 32 KB, Scan- IRLZ34N-003PBF
- International Rectifier
- 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 32 KB, Scan- IRLZ34N-004
- International Rectifier
- 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 32 KB, Scan- IRLZ34N-004PBF
- International Rectifier
- 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 32 KB, Scan- IRLZ34N-005
- International Rectifier
- 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 32 KB, Scan- IRLZ34N-005PBF
- International Rectifier
- 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Infineon.com/IRLZ34NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"30(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"68(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1520 Bytes - 15:01:23, 22 December 2024
Infineon.com/IRLZ34NSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"3.8(W)","Continuous Drain Current":"30(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1503 Bytes - 15:01:23, 22 December 2024
Infineon.com/IRLZ34NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"30(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1522 Bytes - 15:01:23, 22 December 2024
Irf.com/IRLZ34N-003
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-M...
1336 Bytes - 15:01:23, 22 December 2024
Irf.com/IRLZ34N-003PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Co...
1407 Bytes - 15:01:23, 22 December 2024
Irf.com/IRLZ34N-004
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-M...
1336 Bytes - 15:01:23, 22 December 2024
Irf.com/IRLZ34N-004PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Co...
1408 Bytes - 15:01:23, 22 December 2024
Irf.com/IRLZ34N-005
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-M...
1337 Bytes - 15:01:23, 22 December 2024
Irf.com/IRLZ34N-005PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Co...
1408 Bytes - 15:01:23, 22 December 2024
Irf.com/IRLZ34N-006
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-M...
1337 Bytes - 15:01:23, 22 December 2024
Irf.com/IRLZ34N-006PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Co...
1406 Bytes - 15:01:23, 22 December 2024
Irf.com/IRLZ34N-007
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-M...
1331 Bytes - 15:01:23, 22 December 2024
