Product Datasheet Search Results:

IRG4BC10SD-SPBF.pdf13 Pages, 319 KB, Original
IRG4BC10SD-SPBF
Infineon Technologies Ag
Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2+Tab) D2PAK Tube
IRG4BC10SD-S.pdf13 Pages, 222 KB, Original
IRG4BC10SD-S
International Rectifier
DIODE IGBT 600V 14A D2PAK - IRG4BC10SD-S
IRG4BC10SD-SPBF.pdf13 Pages, 319 KB, Original
IRG4BC10SD-SPBF
International Rectifier
IGBT N-CH W/DIO 600V 14A D2PAK - IRG4BC10SD-SPBF
IRG4BC10SD-STRL.pdf13 Pages, 319 KB, Original
IRG4BC10SD-STRLPBF.pdf13 Pages, 319 KB, Original
IRG4BC10SD-STRR.pdf13 Pages, 319 KB, Original
IRG4BC10SD-STRRPBF.pdf13 Pages, 319 KB, Original

Product Details Search Results:

Infineon.com/IRG4BC10SD-SPBF
{"Collector Current (DC) ":"14(A)","Operating Temperature (Min)":"-55C","Collector-Emitter Voltage":"600(V)","Mounting":"Surface Mount","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"\u00b120(V)","Channel Type":"N","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Configuration":"Single","Pin Count":"2 +Tab"}...
1567 Bytes - 00:19:31, 26 November 2024
Irf.com/IRG4BC10SD-S
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"14A","Switching Energy":"310\u00b5J (on), 3.28mJ (off)","Vce(on) (Max) @ Vge, Ic":"1.8V @ 15V, 8A","Td (on/off) @ 25\u00b0C":"76ns/815ns","Input Type":"Standard","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"15nC","Product Photos":"TO-263","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"28ns","Datasheets":"IRG4BC10SD-S/L","Standard Package":"50","Test Conditi...
1720 Bytes - 00:19:31, 26 November 2024
Irf.com/IRG4BC10SD-SPBF
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"14A","Switching Energy":"310\u00b5J (on), 3.28mJ (off)","Vce(on) (Max) @ Vge, Ic":"1.8V @ 15V, 8A","Td (on/off) @ 25\u00b0C":"76ns/815ns","Input Type":"Standard","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"15nC","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Diode Supplier 01/Apr/2014 Alternate Diode Supplier Retraction 04/Apr/2014 Assembly Site Addition 10/Jul/2015","Voltage - Co...
1948 Bytes - 00:19:31, 26 November 2024
Irf.com/IRG4BC10SD-STRL
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, D2PAK-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Turn-off Time-Nom (toff)":"1780 ns","Collector Current-Max (IC)":"14 A","Collector-emitter Voltage-Max":"600 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"106 ns","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Te...
1416 Bytes - 00:19:31, 26 November 2024
Irf.com/IRG4BC10SD-STRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"1780 ns","Collector Current-Max (IC)":"14 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"106 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","Transi...
1494 Bytes - 00:19:31, 26 November 2024
Irf.com/IRG4BC10SD-STRR
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, D2PAK-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Turn-off Time-Nom (toff)":"1780 ns","Collector Current-Max (IC)":"14 A","Collector-emitter Voltage-Max":"600 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"106 ns","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Te...
1416 Bytes - 00:19:31, 26 November 2024
Irf.com/IRG4BC10SD-STRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"1780 ns","Collector Current-Max (IC)":"14 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"106 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","Transi...
1494 Bytes - 00:19:31, 26 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
IRG4BC10SD-S.pdf0.221Request