Product Datasheet Search Results:
33 Pages, 1029 KB, Scan- IRFY120ME
- International Rectifier
- 7.3 A, 100 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
33 Pages, 1029 KB, Scan- IRFY120MEA
- International Rectifier
- 7.3 A, 100 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
33 Pages, 1029 KB, Scan- IRFY120MEAPBF
- International Rectifier
- 7.3 A, 100 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
33 Pages, 1029 KB, Scan- IRFY120MEB
- International Rectifier
- 7.3 A, 100 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
33 Pages, 1029 KB, Scan- IRFY120MEBPBF
- International Rectifier
- 7.3 A, 100 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
33 Pages, 1029 KB, Scan- IRFY120MEC
- International Rectifier
- 7.3 A, 100 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
33 Pages, 1029 KB, Scan- IRFY120MED
- International Rectifier
- 7.3 A, 100 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
33 Pages, 1029 KB, Scan- IRFY120MEDPBF
- International Rectifier
- 7.3 A, 100 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
33 Pages, 1029 KB, Scan- IRFY120MEPBF
- International Rectifier
- 7.3 A, 100 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
Product Details Search Results:
Irf.com/IRFY120ME
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"29 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"7.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1403 Bytes - 00:36:08, 11 January 2025
Irf.com/IRFY120MEA
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"29 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"7.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1406 Bytes - 00:36:08, 11 January 2025
Irf.com/IRFY120MEAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"29 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1476 Bytes - 00:36:08, 11 January 2025
Irf.com/IRFY120MEB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"29 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"7.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1409 Bytes - 00:36:08, 11 January 2025
Irf.com/IRFY120MEBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"29 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1476 Bytes - 00:36:08, 11 January 2025
Irf.com/IRFY120MEC
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"29 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"7.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1407 Bytes - 00:36:08, 11 January 2025
Irf.com/IRFY120MED
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"29 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"7.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1407 Bytes - 00:36:08, 11 January 2025
Irf.com/IRFY120MEDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"29 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1476 Bytes - 00:36:08, 11 January 2025
Irf.com/IRFY120MEPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"29 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1468 Bytes - 00:36:08, 11 January 2025
