Product Datasheet Search Results:

IRF9530NS.pdf11 Pages, 145 KB, Original
IRF9530NS
Infineon Technologies Ag
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK T/R
IRF9530NSPBF.pdf11 Pages, 764 KB, Original
IRF9530NSPBF
Infineon Technologies Ag
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK Tube
IRF9530NSTRLHR.pdf11 Pages, 145 KB, Original
IRF9530NSTRLHR
Infineon Technologies Ag
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab)
IRF9530NSTRLPBF.pdf11 Pages, 811 KB, Original
IRF9530NSTRLPBF
Infineon Technologies Ag
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK T/R
IRF9530NSTRRPBF.pdf11 Pages, 145 KB, Original
IRF9530NSTRRPBF
Infineon Technologies Ag
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK T/R
IRF9530NS.pdf11 Pages, 161 KB, Original
IRF9530NS
International Rectifier
MOSFET P-CH 100V 14A D2PAK - IRF9530NS
IRF9530NSPBF.pdf11 Pages, 764 KB, Original
IRF9530NSPBF
International Rectifier
MOSFET P-CH 100V 14A D2PAK - IRF9530NSPBF
IRF9530NSTRL.pdf11 Pages, 764 KB, Original
IRF9530NSTRL
International Rectifier
14 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
IRF9530NSTRLHR.pdf11 Pages, 145 KB, Original
IRF9530NSTRLHR
International Rectifier
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab)
IRF9530NSTRLPBF.pdf11 Pages, 764 KB, Original
IRF9530NSTRLPBF
International Rectifier
MOSFET P-CH 100V 14A D2PAK - IRF9530NSTRLPBF
IRF9530NSTRR.pdf11 Pages, 145 KB, Original
IRF9530NSTRR
International Rectifier
MOSFET P-CH 100V 14A D2PAK - IRF9530NSTRR
IRF9530NSTRRPBF.pdf11 Pages, 764 KB, Original
IRF9530NSTRRPBF
International Rectifier
MOSFET P-CH 100V 14A D2PAK - IRF9530NSTRRPBF

Product Details Search Results:

Infineon.com/IRF9530NS
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"3.8(W)","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1500 Bytes - 14:33:30, 01 November 2024
Infineon.com/IRF9530NSPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1511 Bytes - 14:33:30, 01 November 2024
Infineon.com/IRF9530NSTRLHR
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1510 Bytes - 14:33:30, 01 November 2024
Infineon.com/IRF9530NSTRLPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1602 Bytes - 14:33:30, 01 November 2024
Infineon.com/IRF9530NSTRRPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1525 Bytes - 14:33:30, 01 November 2024
Irf.com/IRF9530NS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"760pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF9530NS/L","Rds On (Max) @ Id, Vgs":"200 mOhm @ 8.4A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.8W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB...
1614 Bytes - 14:33:30, 01 November 2024
Irf.com/IRF9530NSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"14A (Tc)","Gate Charge (Qg) @ Vgs":"58nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Mosfet D2Pak Assembly Site 9/Aug/2013 D2PAK Additional Assembly Site 17/Dec/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"20...
1898 Bytes - 14:33:30, 01 November 2024
Irf.com/IRF9530NSTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"P-CHANNEL","FET Tec...
1575 Bytes - 14:33:30, 01 November 2024
Irf.com/IRF9530NSTRLHR
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"100(V)","Frequency (Max)":"Not Required MHz","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain "...
1711 Bytes - 14:33:30, 01 November 2024
Irf.com/IRF9530NSTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"14A (Tc)","Gate Charge (Qg) @ Vgs":"58nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"D2PAK Additional Assembly Site 17/Dec/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"200 mOhm @ 8.4A, 10V","Datasheets":"IRF9...
2026 Bytes - 14:33:30, 01 November 2024
Irf.com/IRF9530NSTRR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF9530NS/L","Rds On (Max) @ Id, Vgs":"200 mOhm @ 8.4A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.8W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount",...
1623 Bytes - 14:33:30, 01 November 2024
Irf.com/IRF9530NSTRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"14A (Tc)","Gate Charge (Qg) @ Vgs":"58nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"D2PAK Additional Assembly Site 17/Dec/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"200 mOhm @ 8.4A, 10V","Datasheets":"IRF9...
1868 Bytes - 14:33:30, 01 November 2024

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