Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"9.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"80(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"9.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"80(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"80(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"N","Continuous Drain Current":"9.3(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOIC","Drain-Source On-Res":"0.015(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"8","Channel Mode":"Enhancement","Dr...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"9.3A (Tc)","Gate Charge (Qg) @ Vgs":"53nC @ 10V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 15/Apr/2014 Qualification Wafer Fab Site 09/Jul/2014 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (H...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"8-SOIC","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"4,000","Supplier Device Package":"8-SO","Datasheets":"IRF7493","Rds On (Max) @ Id, Vgs":"15 mOhm @ 5.6A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Mounting Type":"Surface Mount","Drain to Source Vol...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"9.3A (Tc)","Gate Charge (Qg) @ Vgs":"53nC @ 10V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 15/Apr/2014 Qualification Wafer Fab Site 09/Jul/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max...