Product Datasheet Search Results:

IRF610-001.pdf1 Pages, 42 KB, Scan
IRF610-001
Vishay Presicion Group
3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF610-001PBF.pdf1 Pages, 42 KB, Scan
IRF610-001PBF
Vishay Presicion Group
3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Vishay.com/IRF610-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"8 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3.3 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package...
1390 Bytes - 01:43:45, 17 November 2024
Vishay.com/IRF610-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...
1454 Bytes - 01:43:45, 17 November 2024

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