Product Datasheet Search Results:
10 Pages, 387 KB, Original- AUIRF2907Z
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 170A Automotive 3-Pin(3+Tab) TO-220AB Tube
13 Pages, 296 KB, Original- AUIRF2907ZS-7P
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 180A Automotive 7-Pin(6+Tab) D2PAK Tube
12 Pages, 423 KB, Original- IRF2907ZPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube
10 Pages, 297 KB, Original- IRF2907ZS-7PPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 180A 7-Pin(6+Tab) D2PAK Tube
12 Pages, 423 KB, Original- IRF2907ZSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK Tube
12 Pages, 423 KB, Original- IRF2907ZSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK T/R
12 Pages, 289 KB, Original- AUIRF2907Z
- International Rectifier
- MOSFET N-CH 75V 75A TO220AB - AUIRF2907Z
13 Pages, 296 KB, Original- AUIRF2907ZS-7P
- International Rectifier
- MOSFET N-CH 75V 180A D2PAK-7 - AUIRF2907ZS-7P
13 Pages, 296 KB, Original- AUIRF2907ZS7PTL
- International Rectifier
- MOSFET N-CH 75V 180A D2PAK-7 - AUIRF2907ZS7PTL
13 Pages, 296 KB, Original- AUIRF2907ZS7PTR
- International Rectifier
- MOSFET N-CH 75V 180A D2PAK-7 - AUIRF2907ZS7PTR
13 Pages, 372 KB, Original- IRF2907Z
- International Rectifier
- IRF2907Z
12 Pages, 361 KB, Original- IRF2907ZL
- International Rectifier
- AUTOMOTIVE MOSFET
Product Details Search Results:
Infineon.com/AUIRF2907Z
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"170(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1618 Bytes - 04:44:34, 29 November 2024
Infineon.com/AUIRF2907ZS-7P
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"180(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"6 +Tab","Number of Elements":"1"}...
1556 Bytes - 04:44:34, 29 November 2024
Infineon.com/IRF2907ZPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"170(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1548 Bytes - 04:44:34, 29 November 2024
Infineon.com/IRF2907ZS-7PPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"300(W)","Continuous Drain Current":"180(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"6 +Tab","Number of Elements":"1"}...
1549 Bytes - 04:44:34, 29 November 2024
Infineon.com/IRF2907ZSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"170(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1538 Bytes - 04:44:34, 29 November 2024
Infineon.com/IRF2907ZSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"170(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Tape and Reel","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1544 Bytes - 04:44:34, 29 November 2024
Irf.com/AUIRF2907Z
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"270nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.5 mOhm @ 75A, 10V","Datasheets":"AUIRF2907Z","FET Type":"MOSFET N-Chann...
1930 Bytes - 04:44:34, 29 November 2024
Irf.com/AUIRF2907ZS-7P
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-7, D\u00b2Pak (6 Leads + Tab), TO-263CB","Current - Continuous Drain (Id) @ 25\u00b0C":"180A (Tc)","Gate Charge (Qg) @ Vgs":"260nC @ 10V","Product Photos":"D2PAK SOT427","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"3.8 mOhm @ 110A, 10V","Datasheets"...
1899 Bytes - 04:44:34, 29 November 2024
Irf.com/AUIRF2907ZS7PTL
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"410 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0038 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-CHA...
1624 Bytes - 04:44:34, 29 November 2024
Irf.com/AUIRF2907ZS7PTR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"410 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0038 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-CHA...
1624 Bytes - 04:44:34, 29 November 2024
Irf.com/IRF2907ZLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Gate Charge (Qg) @ Vgs":"270nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.5 mOhm @ 75A, 10V","Datasheets":"IRF2907Z (S,L) PbF","FET Type":"MOSFET N-Channel, Meta...
1922 Bytes - 04:44:34, 29 November 2024
Irf.com/IRF2907ZPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"160A (Tc)","Gate Charge (Qg) @ Vgs":"270nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.5 mOhm @ 75A, 10V","Datasheets":"IRF2907Z (S,...
2082 Bytes - 04:44:34, 29 November 2024
