Product Datasheet Search Results:
4 Pages, 126 KB, Scan- IRF151
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 40 A, 60 V/100 V
4 Pages, 200 KB, Original- IRF151
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF151
- Frederick Components
- Power MOSFET Selection Guide
19 Pages, 625 KB, Original- IRF151
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
5 Pages, 192 KB, Scan- IRF151
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A.
2 Pages, 126 KB, Scan- IRF151
- General Electric
- Power Transistor Data Book 1985
5 Pages, 199 KB, Scan- IRF151
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 205 KB, Scan- IRF151R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 58 KB, Original- IRF151
- Intersil Corporation
- 33A and 40A, 60V and 100V, 0.055 and 0.08 ?, N-Channel Power MOSFETs
1 Pages, 36 KB, Original- IRF151
- International Rectifier
- N-Channel Power MOSFETs
1 Pages, 41 KB, Original- IRF151R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
1 Pages, 46 KB, Scan- IRF151
- Ixys Corporation
- (IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
1 Pages, 37 KB, Original- IRF151
- National Semiconductor
- N-Channel Power MOSFETs
5 Pages, 212 KB, Scan- IRF151
- Samsung Electronics
- N-CHANNEL POWER MOSFETS
1 Pages, 59 KB, Scan- IRF151
- Stmicroelectronics
- Shortform Data Book 1988
2 Pages, 68 KB, Scan- IRF151CHIP
- Stmicroelectronics
- N-Channel Enhancement Mode Power MOS Transistor DIE
Product Details Search Results:
St.com/IRF151CHIP
{"Package":"Chip","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"1.0m","V(BR)DSS (V)":"60","I(D) Abs. Drain Current (A)":"40","Military":"N","r(DS)on Max. (Ohms)":"55m"}...
660 Bytes - 22:38:55, 19 September 2024
Various/IRF151R
{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"11","I(D) Abs. Max.(A) Drain Curr.":"25","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"125n","r(DS)on Max. (Ohms)":"55m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"160","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"9.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"20","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...
1294 Bytes - 22:38:55, 19 September 2024
