Product Datasheet Search Results:
12 Pages, 1228 KB, Original- IPS105N03LG
- Infineon Technologies Ag
- 35 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
Product Details Search Results:
Infineon.com/IPS105N03LG
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"38 W","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0105 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"...
1635 Bytes - 04:49:22, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPS105N03LG.pdf | 1.20 | 1 | Request |
