Product Datasheet Search Results:
- IPD053N08N3G
- Infineon Technologies
- IPD053N08N3G
- IPD053N08N3GATMA1
- Infineon Technologies
- MOSFET MV POWER MOS
- IPD053N08N3GBTMA1
- Infineon Technologies
- MOSFET N-Ch 80V 90A DPAK-2 OptiMOS 3
- IPD053N08N3GXT
- Infineon Technologies Ag
- Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) TO-252 T/R
Product Details Search Results:
Infineon.com/IPD053N08N3G
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"190 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"90 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0053 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"360 A","Channel Type":"N-CHANNEL","China ...
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Infineon.com/IPD053N08N3GATMA1
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3.5V @ 90\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"90A (Tc)","Gate Charge (Qg) @ Vgs":"69nC @ 10V","Product Photos":"TO252-3","Rds On (Max) @ Id, Vgs":"5.3 mOhm @ 90A, 10V","Datasheets":"IPD053N08N3 G","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015","Drain ...
1948 Bytes - 21:42:48, 28 November 2024
Infineon.com/IPD053N08N3GBTMA1
{"Product Category":"MOSFET","Series":"XPD053N08","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1187 Bytes - 21:42:48, 28 November 2024
Infineon.com/IPD053N08N3GXT
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"90 A","Mounting":"Surface Mount","Drain-Source On-Volt":"80 V","Packaging":"Tape and Reel","Power Dissipation":"150 W","Operating Temp Range":"-55C to 175C","Package Type":"TO-252","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1512 Bytes - 21:42:48, 28 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
IPD053N08N3G.pdf | 0.44 | 1 | Request |