IPD053N08N3GATMA1 MOSFET N-CH 80V 90A TO252-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Datasheets | IPD053N08N3 G |
| Drain to Source Voltage (Vdss) | 80V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 69nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4750pF @ 40V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | IPD053N08N3GATMA1CT |
| PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT) |
| Power - Max | 150W |
| Product Photos | TO252-3 |
| Rds On (Max) @ Id, Vgs | 5.3 mOhm @ 90A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1 |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
