Product Datasheet Search Results:
11 Pages, 646 KB, Original- IPB123N10N3G
- Infineon Technologies Ag
- 58 A, 100 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
12 Pages, 647 KB, Original- IPB123N10N3GATMA1
- Infineon Technologies
- MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
Product Details Search Results:
Infineon.com/IPB123N10N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"70 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"58 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0123 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"232 A","Channel Type":"N-CHANNEL","FET...
1613 Bytes - 03:53:19, 17 November 2024
Infineon.com/IPB123N10N3GATMA1
{"Product Category":"MOSFET","Series":"XPB123N10","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1191 Bytes - 03:53:19, 17 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPB123N10N3G.pdf | 0.63 | 1 | Request |
