Product Datasheet Search Results:
- HAT2105T-EL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
- HAT2105T-EL-E
- Renesas Electronics
- 0.5 A, 200 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/HAT2105T-EL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-O...
1532 Bytes - 08:02:17, 24 November 2024
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DATA_SHEET_NAVIGATOR_600_PHOSPHATE_PHOSPHATE_ANALYZER.pdf | 2.52 | 1 | Request | |
DATA_SHEET_AZTEC_600_PHOSPHATE_PHOSPHATE_ANALYZER.pdf | 14.65 | 1 | Request | |
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CONTROL_ROOM_DESIGN_CONTROL_ROOM_SOLUTIONS_THAT_PUT_PEOPLE_AND_PRODUCTIVITY_FIRST.pdf | 4.31 | 1 | Request |