Product Datasheet Search Results:

HAT2105T-EL-E.pdf4 Pages, 85 KB, Original
HAT2105T-EL-E
Renesas Technology / Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching
HAT2105T-EL-E.pdf6 Pages, 109 KB, Original
HAT2105T-EL-E
Renesas Electronics
0.5 A, 200 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/HAT2105T-EL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-O...
1532 Bytes - 08:02:17, 24 November 2024

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