HAT2105T-EL-E 0.5 A, 200 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From Renesas Electronics
| Status | DISCONTINUED |
| Channel Type | N-CHANNEL |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (ID) | 0.5000 A |
| Drain-source On Resistance-Max | 5.5 ohm |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Lead Free | Yes |
| Mfr Package Description | TSSOP-8 |
| Number of Elements | 2 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Pulsed Drain Current-Max (IDM) | 2 A |
| Surface Mount | Yes |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
