Product Datasheet Search Results:

HAF2012(L).pdf10 Pages, 96 KB, Original
HAF2012(L)
Renesas Technology / Hitachi Semiconductor
Silicon N Channel MOS FET Series Power Switching
HAF2012(L)-(S).pdf8 Pages, 38 KB, Original
HAF2012(L)/(S).pdf8 Pages, 38 KB, Original
HAF2012(L).pdf8 Pages, 38 KB, Original

Product Details Search Results:

Renesas.com/HAF2012(L)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"0.0650 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"3"}...
996 Bytes - 04:27:42, 22 November 2024

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