Product Datasheet Search Results:
- HAF2012(L)
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET Series Power Switching
- HAF2012(L)-(S)
- Hitachi Semiconductor
- Thermal MOS FETs
- HAF2012(L)/(S)
- Hitachi Semiconductor
- Thermal MOS FETs
- HAF2012(L)
- Renesas Electronics
- 0.065 ohm, POWER, FET
Product Details Search Results:
Renesas.com/HAF2012(L)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"0.0650 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"3"}...
996 Bytes - 09:23:06, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
US2:JXD63B400HAFBF.pdf | 1.45 | 1 | Request | |
7B30SHAFTREV.pdf | 0.04 | 1 | Request | |
3HAF064601_2.pdf | 0.04 | 1 | Request | |
7B26SHAFTREV.pdf | 0.04 | 1 | Request | |
INVERTER_DUTY_MOTORS_WITH_SHAFT_GROUNDING_BRUSH.pdf | 0.31 | 1 | Request | |
3HAF072029.pdf | 0.04 | 1 | Request | |
7B23SHAFTREV.pdf | 0.04 | 1 | Request | |
SHAFT_ALIGMENT_RING_OHZX11.pdf | 0.27 | 1 | Request | |
7B15SHAFTREV.pdf | 0.04 | 1 | Request | |
3HAF055962.pdf | 0.04 | 1 | Request | |
TASHAFTGUARD_02.pdf | 0.04 | 1 | Request | |
TASHAFTGUARD_01.pdf | 0.04 | 1 | Request |