Product Datasheet Search Results:

HAF2012(L).pdf10 Pages, 96 KB, Original
HAF2012(L)
Renesas Technology / Hitachi Semiconductor
Silicon N Channel MOS FET Series Power Switching
HAF2012(L)-(S).pdf8 Pages, 38 KB, Original
HAF2012(L)/(S).pdf8 Pages, 38 KB, Original
HAF2012(L).pdf8 Pages, 38 KB, Original

Product Details Search Results:

Renesas.com/HAF2012(L)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"0.0650 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"3"}...
996 Bytes - 09:23:06, 25 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
US2:JXD63B400HAFBF.pdf1.451Request
7B30SHAFTREV.pdf0.041Request
3HAF064601_2.pdf0.041Request
7B26SHAFTREV.pdf0.041Request
INVERTER_DUTY_MOTORS_WITH_SHAFT_GROUNDING_BRUSH.pdf0.311Request
3HAF072029.pdf0.041Request
7B23SHAFTREV.pdf0.041Request
SHAFT_ALIGMENT_RING_OHZX11.pdf0.271Request
7B15SHAFTREV.pdf0.041Request
3HAF055962.pdf0.041Request
TASHAFTGUARD_02.pdf0.041Request
TASHAFTGUARD_01.pdf0.041Request