Product Details Search Results:

Gansystems.com/GS66504B-E01-TY
{"Mounting Style":"SMD/SMT","Vds - Drain-Source Breakdown Voltage":"650 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"110 mOhms","Brand":"GaN Systems","Id - Continuous Drain Current":"15 A","Vgs th - Gate-Source Threshold Voltage":"1.6 V","Packaging":"Tray","Product Category":"MOSFET","Qg - Gate Charge":"3.3 nC","Vgs - Gate-Source Breakdown Voltage":"+/- 10 V","Configuration":"Single","RoHS":"Details","Manufacturer":"GaN Systems"}...
1439 Bytes - 01:15:40, 22 November 2024

Documentation and Support

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File NameFile Size (MB)DocumentMOQSupport
MBM150GS6AW.pdf0.091Request
MBB200GS6AW.pdf0.151Request
MBM300GS6AW.pdf0.091Request
MBN200GS6AW.pdf0.091Request
MBN400GS6AW.pdf0.321Request
MBM600GS6CW.pdf0.101Request
MBN300GS6AW.pdf0.081Request
MBM400GS6AW.pdf0.091Request
MBM200GS6AW.pdf0.091Request
ERG1FGS620D.pdf0.921Request
ERG1FGS683D.pdf0.921Request
ERG1FGS621D.pdf0.921Request