GS66504B-E01-TY MOSFET 650V, 15A, E-Mode GaN
From GaN Systems
Brand | GaN Systems |
Configuration | Single |
Id - Continuous Drain Current | 15 A |
Manufacturer | GaN Systems |
Mounting Style | SMD/SMT |
Packaging | Tray |
Product Category | MOSFET |
Qg - Gate Charge | 3.3 nC |
Rds On - Drain-Source Resistance | 110 mOhms |
RoHS | Details |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Vgs - Gate-Source Breakdown Voltage | +/- 10 V |
Vgs th - Gate-Source Threshold Voltage | 1.6 V |