Product Datasheet Search Results:
1 Pages, 87 KB, Scan- GC1512D
- Api Electronics Group
- 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1 Pages, 87 KB, Scan- GC1512D-2%
- Api Electronics Group
- 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1 Pages, 87 KB, Scan- GC1512D-5%
- Api Electronics Group
- 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
2 Pages, 121 KB, Scan- GC1512D
- Msi Electronics, Inc.
- 30V Vrrm, 8.2pF Capacitance Varactor Diode
2 Pages, 121 KB, Scan- GC1512D-+2
- Msi Electronics, Inc.
- 30V Vrrm, 8.2pF Capacitance Varactor Diode
2 Pages, 121 KB, Scan- GC1512D-+5
- Msi Electronics, Inc.
- 30V Vrrm, 8.2pF Capacitance Varactor Diode
Product Details Search Results:
Apitech.com/GC1512D
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4","Package Style":"MICROWAVE","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Number of Elements":"1","Diode Cap Tolerance":"10 %","Quality Factor-Min":"2000","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package...
1289 Bytes - 23:54:37, 27 November 2024
Apitech.com/GC1512D-2%
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4","Package Style":"MICROWAVE","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Number of Elements":"1","Diode Cap Tolerance":"2 %","Quality Factor-Min":"2000","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package ...
1305 Bytes - 23:54:37, 27 November 2024
Apitech.com/GC1512D-5%
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4","Package Style":"MICROWAVE","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Number of Elements":"1","Diode Cap Tolerance":"5 %","Quality Factor-Min":"2000","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package ...
1305 Bytes - 23:54:37, 27 November 2024
Various/GC1512D
{"C1/C2 Min. Capacitance Ratio":"4.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"2.0k","Package":"Pill-C","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"0","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
799 Bytes - 23:54:37, 27 November 2024
Various/GC1512D-+2
{"C1/C2 Min. Capacitance Ratio":"4.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"2.0k","Package":"Pill-C","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"0","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 23:54:37, 27 November 2024
Various/GC1512D-+5
{"C1/C2 Min. Capacitance Ratio":"4.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"2.0k","Package":"Pill-C","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"0","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 23:54:37, 27 November 2024
