Product Datasheet Search Results:
4 Pages, 150 KB, Original- FSU02LG
- Sumitomo Electric Industries, Ltd.
- S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
4 Pages, 35 KB, Original- FSU02LG
- Fujitsu Semiconductor
- S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
4 Pages, 96 KB, Original- FSU02LG-E1
- Fujitsu
- FET: P Channel: ID 0.15 A
Product Details Search Results:
Eudyna.com/FSU02LG
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"12 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"...
1436 Bytes - 01:26:39, 15 November 2024
Fujitsu.com/FSU02LG
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"DISK BUTTON","Transistor Application":"AMPLIFIER","Highest Frequency Band":"L BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Position":"UNSPECIFIED","Transistor Type":"...
1336 Bytes - 01:26:39, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FSU05A30.pdf | 1.62 | 1 | Request | |
| FSU05D60.pdf | 1.20 | 1 | Request | |
| FSU05A60.pdf | 1.71 | 1 | Request | |
| FSU05A20.pdf | 1.62 | 1 | Request | |
| FSU05A40.pdf | 1.66 | 1 | Request | |
| FSU05B60.pdf | 1.72 | 1 | Request |
