Product Datasheet Search Results:
9 Pages, 101 KB, Original- FSGYC164D1
- Fairchild Semiconductor
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
7 Pages, 108 KB, Original- FSGYC164D1
- International Rectifier
- 69 A, 150 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Irf.com/FSGYC164D1
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"69 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0230 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1492 Bytes - 05:17:07, 14 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IZT41-64D16HP-3BU.pdf | 14.82 | 1 | Request | |
| YOKOGAWA_64D1E9BD.pdf | 0.27 | 1 | Request | |
| YOKOGAWA_D9864D1A.pdf | 0.21 | 1 | Request | |
| 1SAS053064D1200.pdf | 0.04 | 1 | Request | |
| 4GAAC64D1200000.pdf | 0.04 | 1 | Request | |
| 4GAAC64D1200L30.pdf | 0.04 | 1 | Request | |
| 1SAS053064D1100.pdf | 0.04 | 1 | Request |
