Product Datasheet Search Results:
7 Pages, 165 KB, Original- FS10AS-3-T13
- Renesas Technology / Hitachi Semiconductor
- High-Speed Switching Use Nch Power MOS FET
4 Pages, 184 KB, Scan- FS10AS-3-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 150 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FS10AS-3-T1
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"10 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RE...
1459 Bytes - 17:49:50, 18 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FS100R07N3E4_B11.pdf | 0.51 | 1 | Request | |
| FS100R12KT4.pdf | 0.27 | 1 | Request | |
| FS100R07N2E4.pdf | 0.50 | 1 | Request | |
| FS100R12KT4G_B11.pdf | 0.29 | 1 | Request | |
| FS100R12KS4.pdf | 0.26 | 1 | Request | |
| FS100R07N3E4.pdf | 0.50 | 1 | Request | |
| FS100R07N2E4_B11.pdf | 0.51 | 1 | Request | |
| FS100R12KT3.pdf | 0.32 | 1 | Request | |
| FS100R07PE4.pdf | 0.99 | 1 | Request | |
| FS10R06XL4.pdf | 0.23 | 1 | Request | |
| FS10R12VT3.pdf | 0.24 | 1 | Request | |
| FS100R12PT4.pdf | 0.57 | 1 | Request |
