Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-262-3 Long Leads","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"QFET\u00ae","Standard Package":"50","PCN Design/Specification":"Passivation Material 26/June/2007","Product Training Modules":"High Voltage Switches for Power Processing","Datasheets":"FQB8N60C, FQI8N60C","Rds On (Max) @ Id, Vgs":"1.2 Ohm @ 3.75A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max"...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"600(V)","Packaging":"Rail/Tube","Power Dissipation":"3.13(W)","Operating Temp Range":"-55C to 150C","Package Type":"I2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...