FQI8N60CTU MOSFET N-CH 600V 7.5A I2PAK
From Fairchild Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Datasheets | FQB8N60C, FQI8N60C |
| Drain to Source Voltage (Vdss) | 600V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1255pF @ 25V |
| Mounting Type | Through Hole |
| PCN Design/Specification | Passivation Material 26/June/2007 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Packaging | Tube |
| Power - Max | 3.13W |
| Product Photos | TO-262-3 Long Leads |
| Product Training Modules | High Voltage Switches for Power Processing |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.75A, 10V |
| Series | QFET® |
| Standard Package | 50 |
| Supplier Device Package | I2PAK |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
