Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"860 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"N-CHANNEL","...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Current - Continuous Drain (Id) @ 25\u00b0C":"13A (Tc)","Gate Charge (Qg) @ Vgs":"56nC @ 10V","Product Photos":"TO-262-3 Long Leads","PCN Design/Specification":"Passivation Material 14/May/2008","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"480 mOhm @ 6.5A, 10V","Datasheets":"FQI13N50C",...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"13(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Packaging":"Rail/Tube","Power Dissipation":"195(W)","Operating Temp Range":"-55C to 150C","Package Type":"I2PAK","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...