Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"640 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"31 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"124 A","Channel Type":"N-CHANNEL","FE...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"31A (Tc)","Gate Charge (Qg) @ Vgs":"72nC @ 5V","Product Photos":"TO-263","Rds On (Max) @ Id, Vgs":"75 mOhm @ 15.5A, 10V","Datasheets":"FQB34N20L, FQI34N20L","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Tape and Box/Reel Barcode Update 07/Aug/2014","Drain to Source V...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"520 ns","Typical Turn-Off Delay Time":"170 ns","Description":"Value","Maximum Continuous Drain Current":"31 A","Package":"3D2PAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"45 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"75@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"370 ns"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"3.13(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...