Product Datasheet Search Results:
2 Pages, 315 KB, Original- FQB34N20LTM
- Fairchild
- MOSFET N-CH 200V 31A D2PAK - FQB34N20LTM
9 Pages, 661 KB, Original- FQB34N20LTM_AM002
- Fairchild Semiconductor
- 200V N-Channel Logic Level QFET
9 Pages, 661 KB, Original- FQB34N20LTM_SB82076
- Fairchild Semiconductor
- 200V N-Channel Logic Level QFET
9 Pages, 724 KB, Original- FQB34N20TM
- Fairchild Semiconductor
- 200V N-Channel QFET
10 Pages, 1134 KB, Original- FQB34N20TM-AM002
- Fairchild Semiconductor
- Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R
2 Pages, 315 KB, Original- FQB34N20TM_AM002
- Fairchild
- MOSFET N-CH 200V 31A D2PAK - FQB34N20TM_AM002
19 Pages, 1470 KB, Original- FQB34N20TMAM002
- Fairchild Semiconductor
- FQB34N20TMAM002
10 Pages, 956 KB, Original- FQB34N20LTM
- Aptina Imaging
- Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R
14 Pages, 479 KB, Original- FQB34N20TM-AM002
- On Semiconductor
- FQB34N20TM-AM002
Product Details Search Results:
Fairchildsemi.com/FQB34N20L
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"640 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"31 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"124 A","Channel Type":"N-CHANNEL","FE...
1613 Bytes - 16:40:22, 28 November 2024
Fairchildsemi.com/FQB34N20LTM
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"31A (Tc)","Gate Charge (Qg) @ Vgs":"72nC @ 5V","Product Photos":"TO-263","Rds On (Max) @ Id, Vgs":"75 mOhm @ 15.5A, 10V","Datasheets":"FQB34N20L, FQI34N20L","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Tape and Box/Reel Barcode Update 07/Aug/2014","Drain to Source V...
1857 Bytes - 16:40:22, 28 November 2024
Fairchildsemi.com/FQB34N20LTM/BKN
{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"520 ns","Typical Turn-Off Delay Time":"170 ns","Description":"Value","Maximum Continuous Drain Current":"31 A","Package":"3D2PAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"45 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"75@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"370 ns"}...
1483 Bytes - 16:40:22, 28 November 2024
Fairchildsemi.com/FQB34N20TM
{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"280 ns","Typical Turn-Off Delay Time":"125 ns","Description":"Value","Maximum Continuous Drain Current":"31 A","Package":"3D2PAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b130 V","Typical Turn-On Delay Time":"40 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"75@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"115 ns"}...
1351 Bytes - 16:40:22, 28 November 2024
Fairchildsemi.com/FQB34N20TM-AM002
1110 Bytes - 16:40:22, 28 November 2024
Fairchildsemi.com/FQB34N20TM_AM002
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"31A (Tc)","Gate Charge (Qg) @ Vgs":"78nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"75 mOhm @ 15.5A, 10V","Datasheets":"FQB34N20, FQI34N20","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package"...
1951 Bytes - 16:40:22, 28 November 2024
Fairchildsemi.com/FQB34N20TMAM002
891 Bytes - 16:40:22, 28 November 2024
Onsemi.com/FQB34N20LTM
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"3.13(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1493 Bytes - 16:40:22, 28 November 2024
Onsemi.com/FQB34N20TM-AM002
867 Bytes - 16:40:22, 28 November 2024
Onsemi.com/FQB34N20TM_AM002
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"3.13(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1521 Bytes - 16:40:22, 28 November 2024
Onsemi.com/FQB34N20TMAM002
866 Bytes - 16:40:22, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 7B34N202R327G1.pdf | 0.07 | 1 | Request | |
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| 7B34N201R611G1.pdf | 0.07 | 1 | Request | |
| 7B34N202R684G1.pdf | 0.04 | 1 | Request | |
| 7B34N200W112G1.pdf | 0.07 | 1 | Request | |
| 7B34N205_0883.pdf | 0.04 | 1 | Request | |
| 7B34N208R217G1.pdf | 0.07 | 1 | Request |
