Product Datasheet Search Results:
- FQB12P20TM_SB82075
- Fairchild Semiconductor Corporation
- 11.5 A, 200 V, 0.47 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Fairchildsemi.com/FQB12P20TM_SB82075
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"810 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"46 A","Channel Type":"P-CHANNEL",...
1666 Bytes - 14:40:38, 16 November 2024