Product Datasheet Search Results:

FK10VS-12-T2.pdf5 Pages, 198 KB, Scan
FK10VS-12-T2
Mitsubishi Electric & Electronics Usa, Inc.
10 A, 600 V, 1.18 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Mitsubishichips.com/FK10VS-12-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.18 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application":"SWITCHING","Surface...
1503 Bytes - 12:02:19, 25 November 2024

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