Product Datasheet Search Results:
9 Pages, 197 KB, Original- FDS6986S
- Fairchild Semiconductor
- Dual Notebook Power Supply N-Channel PowerTrench S
9 Pages, 154 KB, Original- FDS6986SD84Z
- Fairchild Semiconductor Corporation
- 7.9 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
12 Pages, 324 KB, Original- FDS6986SF011
- Fairchild Semiconductor Corporation
- 7.9 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 154 KB, Original- FDS6986SL86Z
- Fairchild Semiconductor Corporation
- 7.9 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 154 KB, Original- FDS6986SL99Z
- Fairchild Semiconductor Corporation
- 7.9 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 154 KB, Original- FDS6986SS62Z
- Fairchild Semiconductor Corporation
- 7.9 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fairchildsemi.com/FDS6986SD84Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.9 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0290 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1550 Bytes - 22:43:07, 17 November 2024
Fairchildsemi.com/FDS6986SF011
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.9 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0290 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1549 Bytes - 22:43:07, 17 November 2024
Fairchildsemi.com/FDS6986SL86Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.9 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0290 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1549 Bytes - 22:43:07, 17 November 2024
Fairchildsemi.com/FDS6986SL99Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.9 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0290 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1550 Bytes - 22:43:07, 17 November 2024
Fairchildsemi.com/FDS6986SS62Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.9 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0290 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1548 Bytes - 22:43:07, 17 November 2024
