Product Datasheet Search Results:
- BSP88
- Infineon Technologies
- MOSFET N-CH 240V 350MA SOT223 - BSP88E6327
- BSP88 E6327
- Infineon Technologies
- MOSFET N-CH 240V 350MA SOT223 - BSP88E6327
- BSP88E6327
- Infineon Technologies
- MOSFET N-CH 240V 350MA SOT223
- BSP88 H6327
- Infineon Technologies Ag
- Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R
- BSP88H6327XTSA1
- Infineon Technologies
- MOSFET N-Ch 240V 350mA SOT-223-3
- BSP88 L6327
- Infineon Technologies
- MOSFET N-CH 240V 350MA SOT223 - BSP88 L6327
- BSP88L6327XT
- Infineon Technologies Ag
- Trans MOSFET N-CH 240V 0.35A 4-Pin(3+Tab) SOT-223 T/R
- BSP88
- Siemens Semiconductors
- SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Product Details Search Results:
Infineon.com/BSP88
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1.4 A","Channel Type":"N-CHANNEL","China Ro...
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Infineon.com/BSP88E6327
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"6 Ohm @ 350mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 108\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP88INCT","Packaging":"Cut Tape (CT)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP88","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounting Type":"Surface Mou...
1646 Bytes - 00:25:20, 17 November 2024
Infineon.com/BSP88 H6327
{"Product Category":"MOSFET","Series":"BSP88","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP88H6327XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...
1093 Bytes - 00:25:20, 17 November 2024
Infineon.com/BSP88H6327XTSA1
{"Factory Pack Quantity":"1000","Vds - Drain-Source Breakdown Voltage":"240 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"1.4 V","Qg - Gate Charge":"4.5 nC","Package / Case":"SOT-223-3","Part # Aliases":"SP001058790","Fall Time":"18.9 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Forward Transconductance - Min":"0.19 S","Id - ...
1879 Bytes - 00:25:20, 17 November 2024
Infineon.com/BSP88 L6327
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 108\u00b5A","Input Capacitance (Ciss) @ Vds":"95pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP88","Rds On (Max) @ Id, Vgs":"6 Ohm @ 350mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mount...
1610 Bytes - 00:25:20, 17 November 2024
Infineon.com/BSP88 L6327XT
917 Bytes - 00:25:20, 17 November 2024
Infineon.com/BSP88L6327XT
{"Polarity":"N","Gate-Source Voltage (Max)":"?20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.35 A","Mounting":"Surface Mount","Drain-Source On-Volt":"240 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"6 ohm","Number of Elements":"1"}...
1542 Bytes - 00:25:20, 17 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSP88.pdf | 0.36 | 1 | Request |