Product Datasheet Search Results:

BFQ18AT/R.pdf1 Pages, 41 KB, Original
BFQ18AT/R
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
BFQ18AT/R.pdf7 Pages, 229 KB, Original
BFQ18AT/R
Nxp Semiconductors / Philips Semiconductors
NPN 4 GHz wideband transistor - f<sub>T</sub>: 18 GHz; I<sub>C</sub>: 150 mA; P<sub>tot</sub>: 1000 mW; Polarity: NPN ; VCEO max: 18 V
BFQ18AT/R.pdf6 Pages, 28 KB, Original

Product Details Search Results:

Nxp.com/BFQ18AT/R
{"Collector Current (DC) ":"0.15 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"0.15 A","Collector-Emitter Voltage":"18 V","Mounting":"Surface Mount","Emitter-Base Voltage":"2 V","Category ":"Bipolar RF","Frequency (Max)":"4000 MHz","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Power Dissipation":"1 W","Operating Temp Range":"-65C to 175C","Frequency":"4000 MHz","Package Type":"SOT-89","Collector-Base Voltage":"25 V","Rad Hardened":"No","DC Current Gain":"25"...
1539 Bytes - 14:43:13, 25 November 2024
Semiconductors.philips.com/BFQ18AT/R
{"@I(C) (A) (Test Condition)":"50m","Absolute Max. Power Diss. (W)":"1.0","I(C) Abs.(A) Collector Current":"150m","Semiconductor Material":"Silicon","h(FE) Min. Static Current Gain":"25","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"3.2G","V(BR)CEO (V)":"15","Package":"SOT-89","@Freq. (Hz) (Test Condition)":"1.0m","V(BR)CBO (V)":"25","Military":"N","C(obo) (Max) (F)":"2.0p"}...
972 Bytes - 14:43:13, 25 November 2024

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