Product Datasheet Search Results:
8 Pages, 165 KB, Scan- BF998E6327
- Infineon Technologies Ag
- UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
10 Pages, 91 KB, Original- BF998E6327HTSA1
- Infineon Technologies
- RF MOSFET Transistors N-CH 12 V 30 mA
9 Pages, 90 KB, Original- BF998E6327XT
- Infineon Technologies Ag
- Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R
Product Details Search Results:
Infineon.com/BF998E6327
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0300 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"12 V","Surface Mount":"Yes","Case Connection":"SOURCE",...
1459 Bytes - 01:51:51, 17 November 2024
Infineon.com/BF998E6327HTSA1
{"Product Category":"RF MOSFET Transistors","Series":"BF998","Brand":"Infineon Technologies","Packaging":"Reel","Type":"RF Small Signal MOSFET","RoHS":"Details","Manufacturer":"Infineon"}...
1238 Bytes - 01:51:51, 17 November 2024
Infineon.com/BF998E6327XT
{"Number of Elements":"1","Noise Figure (Max)":"2.8(Typ) dB","Continuous Drain Current":"0.03 A","Mounting":"Surface Mount","Forward Transconductance (Typ)":"0.024 S","Rad Hardened":"No","Frequency (Max)":"1000 MHz","Channel Type":"N","Packaging":"Tape and Reel","Operating Temp Range":"-55C to 150C","Package Type":"SOT-143","Power Gain (Typ)@Vds":"28@8V dB","Power Dissipation (Max)":"200 mW","Screening Level":"Military","Pin Count":"3 +Tab","Drain Source Voltage (Max)":"12 V"}...
1552 Bytes - 01:51:51, 17 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| YOKOGAWA_45BF9988.pdf | 0.47 | 1 | Request |
