Did you mean: BAS40-05-T
Product Datasheet Search Results:
8 Pages, 504 KB, Original- BAS40-05-T&R
- Infineon Technologies
- DIODE SCHOTTKY DIODE 40V 0.12A 3SOT-23 T/R
Product Details Search Results:
Mccsemi.com/BAS40-05-TP
{"Category":"Discrete Semiconductor Products","Package / Case":"TO-236-3, SC-59, SOT-23-3","Diode Configuration":"1 Pair Common Cathode","Product Photos":"SOT-23-3","Product Training Modules":"Diode Handling and Mounting","Reverse Recovery Time (trr)":"5ns","Datasheets":"BAS40 - BAS70","Standard Package":"1","Voltage - Forward (Vf) (Max) @ If":"1V @ 40mA","Voltage - DC Reverse (Vr) (Max)":"40V","Current - Reverse Leakage @ Vr":"200nA @ 30V","Online Catalog":"Schottky Diode Array","Current - Average Rectifie...
1840 Bytes - 17:44:26, 17 November 2024
Mccsemi.com/BAS40-05-TP
{"Avg. Forward Curr (Max)":"0.2","Mounting":"Surface Mount","Rev Curr":"0.2(uA)","Rev Recov Time":"5(ns)","Peak Forward Voltage":"1(V)","Operating Temperature Classification":"Military","Peak Rep Rev Volt":"40(V)","Peak Non-Repetitive Surge Current":"0.6(A)","Forward Current":"200(mA)","Peak Reverse Recovery Time":"5(ns)","Forward Voltage":"1(V)","Package Type":"SOT-23","Peak Non-Repetitive Surge Current (Max)":"0.6","Configuration":"Dual Common Cathode","Maximum Forward Current":"200(mA)","Operating Temp R...
1779 Bytes - 17:44:26, 17 November 2024
Nxp.com/BAS40-05-T
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"40 V","Diode Element Material":"SILICON","Number of Elements":"2","Average Forward Current-Max":"0.1200 A","China RoHS Compliant":"Yes","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"COMMON CATH...
1264 Bytes - 17:44:26, 17 November 2024
Rectron.com/BAS40-05-T
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SMD, 3 PIN","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Average Forward Current-Max":"0.1200 A","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.2500 W","Number of Elements":"2","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"COMMON CATHODE, 2 ELEMENTS","Technol...
1272 Bytes - 17:44:26, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
| SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
| DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
| DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
| DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
| DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |
