Product Datasheet Search Results:

BAS40-04TP.pdf4 Pages, 274 KB, Original
BAS40-04TP
Micro Commercial Components Corp.
0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE

Product Details Search Results:

Mccsemi.com/BAS40-04TP
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"40 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.2000 W","Average Forward Current-Max":"0.2000 A","Number of Elements":"2","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR"...
1403 Bytes - 12:27:28, 22 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf28.151Request
DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf1.561Request
SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf1.991Request
DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf1.321Request
DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf1.461Request
DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf1.431Request
DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf1.321Request
DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf1.631Request
DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf1.271Request
DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf1.181Request
DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf1.541Request
DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf1.541Request