Product Datasheet Search Results:
2 Pages, 29 KB, Original- BAS35S62Z
- Fairchild Semiconductor Corporation
- 0.2 A, 120 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Product Details Search Results:
Fairchildsemi.com/BAS35S62Z
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"120 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.3500 W","Average Forward Current-Max":"0.2000 A","Number of Elements":"2","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"COMMON ANODE, 2 ELEMENTS","Number of Terminals":"3","Reverse Recovery Time-Max":"0.0500 us","Surface Mount":"Yes...
1235 Bytes - 01:18:43, 26 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
| SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
| DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
| DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
| DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
| DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |
