Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.04V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"4,000","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF7416Q","Rds On (Max) @ Id, Vgs":"20 mOhm @ 5.6A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W",...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Turn-Off Delay Time":"59 ns","Description":"Value","Maximum Continuous Drain Current":"10 A","Package":"8SO","Typical Turn-On Delay Time":"18 ns","Mounting":"Surface Mount","Typical Rise Time":"49 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"20@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"60 ns"}...