Product Datasheet Search Results:
3 Pages, 119 KB, Scan- AT451210
- Advanced Semiconductor, Inc.
- L BAND, 8.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
Product Details Search Results:
Advancedsemiconductor.com/AT451210
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"L BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"5.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"45 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of Term...
1269 Bytes - 05:33:59, 18 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 151210.pdf | 0.12 | 1 | Request | |
| 251210.pdf | 0.47 | 1 | Request | |
| 3GBP251210_HEK.pdf | 0.33 | 1 | Request | |
| E5090512100.pdf | 0.07 | 1 | Request | |
| 3GBA351210_BDN.pdf | 0.33 | 1 | Request | |
| 3AAM512107.pdf | 0.06 | 1 | Request | |
| 3GGP251210_AED.pdf | 0.74 | 1 | Request | |
| 3GBA351210_BDMCNKA.pdf | 0.05 | 1 | Request | |
| 3GBA251210_ADYCN.pdf | 0.06 | 1 | Request | |
| 3GJP351210_ADK.pdf | 0.31 | 1 | Request | |
| 3GBA251210_BDCCN.pdf | 0.41 | 1 | Request | |
| 1SKS512102C4319.pdf | 0.07 | 1 | Request |
