Product Datasheet Search Results:

APT11044B2FLL.pdf2 Pages, 35 KB, Original
APT11044B2FLL.pdf5 Pages, 101 KB, Original
APT11044B2FLL
Microsemi Corp.
26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET
APT11044B2FLLG.pdf5 Pages, 101 KB, Original
APT11044B2FLLG
Microsemi Corp.
26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Microsemi.com/APT11044B2FLL
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"3000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1497 Bytes - 21:56:32, 22 November 2024
Microsemi.com/APT11044B2FLLG
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"3000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHAN...
1556 Bytes - 21:56:32, 22 November 2024

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