Product Datasheet Search Results:
- AP03N70H
- Advanced Power Electronics Corp. Usa
- 2.5 A, 700 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
- AP03N70H-A-HF
- Advanced Power Electronics Corp. Usa
- 3.3 A, 650 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
- AP03N70H-H
- Advanced Power Electronics Corp.
- N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Product Details Search Results:
A-power.com.tw/AP03N70H
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"31 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"700 V","Trans...
1495 Bytes - 23:23:38, 25 November 2024
A-power.com.tw/AP03N70H-A-HF
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"3.1 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"13.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"650 V","T...
1569 Bytes - 23:23:38, 25 November 2024
Documentation and Support
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